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High-performance submicrometer channel MOSFETs for analog applications

✍ Scribed by Hung, M.Y.; Antoniadis, D.A.


Book ID
114538388
Publisher
IEEE
Year
1988
Tongue
English
Weight
277 KB
Volume
35
Category
Article
ISSN
0018-9383

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## Abstract In this article, device characteristics of gate material engineered‐trapezoidal recessed channel (GME‐TRC) MOSFET are investigated using device simulators, ATLAS and DEVEDIT. Further, proposed device is examined for cutoff frequency (__F__~T~) and parasitic capacitances, and result offe