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Electronic Transport in Laterally Asymmetric Channel MOSFET for RF Analog Applications

✍ Scribed by Rengel, R.; Martin, M.J.


Book ID
114620106
Publisher
IEEE
Year
2010
Tongue
English
Weight
458 KB
Volume
57
Category
Article
ISSN
0018-9383

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Gate material engineered-trapizoidal rec
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## Abstract In this article, device characteristics of gate material engineered‐trapezoidal recessed channel (GME‐TRC) MOSFET are investigated using device simulators, ATLAS and DEVEDIT. Further, proposed device is examined for cutoff frequency (__F__~T~) and parasitic capacitances, and result offe