Gate material engineered-trapizoidal rec
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Priyanka Malik; Sona P. Kumar; Rishu Chaujar; Mridula Gupta; R. S. Gupta
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Article
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2010
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John Wiley and Sons
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English
β 398 KB
## Abstract In this article, device characteristics of gate material engineeredβtrapezoidal recessed channel (GMEβTRC) MOSFET are investigated using device simulators, ATLAS and DEVEDIT. Further, proposed device is examined for cutoff frequency (__F__~T~) and parasitic capacitances, and result offe