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High-Performance Junctionless MOSFETs for Ultralow-Power Analog/RF Applications

✍ Scribed by Ghosh, Dipankar; Parihar, Mukta Singh; Armstrong, G. Alastair; Kranti, Abhinav


Book ID
118144946
Publisher
IEEE
Year
2012
Tongue
English
Weight
457 KB
Volume
33
Category
Article
ISSN
0741-3106

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## Abstract In this article, device characteristics of gate material engineered‐trapezoidal recessed channel (GME‐TRC) MOSFET are investigated using device simulators, ATLAS and DEVEDIT. Further, proposed device is examined for cutoff frequency (__F__~T~) and parasitic capacitances, and result offe