Junction Termination Extension Implement
Junction Termination Extension Implementing Drive-in Diffusion of Boron for High-Voltage SiC Devices
โ
Bolotnikov, A.V.; Muzykov, P.G.; Qingchun Zhang; Agarwal, A.K.; Sudarshan, T.S.
๐
Article
๐
2010
๐
IEEE
๐
English
โ 979 KB