Junction Termination Extension Implementing Drive-in Diffusion of Boron for High-Voltage SiC Devices

✍ Scribed by Bolotnikov, A.V.; Muzykov, P.G.; Qingchun Zhang; Agarwal, A.K.; Sudarshan, T.S.

• Book ID: 114620052
• Publisher: IEEE
• Year: 2010
• Tongue: English
• Weight: 979 KB
• Volume: 57
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2010.2051246