✦ LIBER ✦

High-performance silicon nanowire field-effect transistor with silicided contacts

✍ Scribed by Rosaz, G; Salem, B; Pauc, N; Gentile, P; Potié, A; Solanki, A; Baron, T

Book ID: 126775140
Publisher: Institute of Physics
Year: 2011
Tongue: English
Weight: 727 KB
Volume: 26
Category: Article
ISSN: 0268-1242
DOI: 10.1088/0268-1242/26/8/085020

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High Performance Silicon Nanowire Field

High Performance Silicon Nanowire Field Effect Transistors

✍ Cui, Yi; Zhong, Zhaohui; Wang, Deli; Wang, Wayne U.; Lieber, Charles M. 📂 Article 📅 2003 🏛 American Chemical Society 🌐 English ⚖ 156 KB

High Performance Silicon Nanowire Field

High Performance Silicon Nanowire Field Effect Transistors

✍ Cui, Yi; Zhong, Zhaohui; Wang, Deli; Wang, Wayne U.; Lieber, Charles M. 📂 Article 📅 2003 🏛 American Chemical Society 🌐 English ⚖ 156 KB

Silicon nanowires can be prepared with single-crystal structures, diameters as small as several nanometers and controllable hole and electron doping, and thus represent powerful building blocks for nanoelectronics devices such as field effect transistors. To explore the potential limits of silicon n

Silicon-Nanowire Transistors with Intrud

Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts

✍ Weber, Walter M.; Geelhaar, Lutz; Graham, Andrew P.; Unger, Eugen; Duesberg, Geo 📂 Article 📅 2006 🏛 American Chemical Society 🌐 English ⚖ 405 KB

High-performance ZnO nanowire field effe

High-performance ZnO nanowire field effect transistors

✍ Chang, Pai-Chun; Fan, Zhiyong; Chien, Chung-Jen; Stichtenoth, Daniel; Ronning, C 📂 Article 📅 2006 🏛 American Institute of Physics 🌐 English ⚖ 613 KB

High Inversion Current in Silicon Nanowi

High Inversion Current in Silicon Nanowire Field Effect Transistors

✍ Koo, Sang-Mo; Fujiwara, Akira; Han, Jin-Ping; Vogel, Eric M.; Richter, Curt A.; 📂 Article 📅 2004 🏛 American Chemical Society 🌐 English ⚖ 325 KB

High performance ring oscillators from 1

High performance ring oscillators from 10-nm wide silicon nanowire field-effect transistors

✍ Ruo-Gu Huang; Douglas Tham; Dunwei Wang; James R. Heath 📂 Article 📅 2011 🏛 Tsinghua Press 🌐 English ⚖ 641 KB