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High-performance Hall sensors based on III–V heterostructures

✍ Scribed by V. Mosser; S. Aboulhouda; J. Denis; S. Contreras; Ph. Lorenzini; F. Kobbi; J.L. Robert

Book ID
103959614
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
439 KB
Volume
42
Category
Article
ISSN
0924-4247

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✦ Synopsis

Hall sensors mth a high senahvlty, a low thermal dnft and a low offset voltage based on AMXAs/InGrAs/GaAs heterostructures have been developed The physnzal phenomena responsible for the thermal dnft of the Hall senntwlty are rmewed and mvestlgated usmg a set of test devices Hnth well-controlled structure parameters These results have been used to optmuze the design of sensors v&h a Hall factor m the 1000 V/AfT range m order to reduce the temperature sensltmty of the channel electron denstty down to a few 100 ppmiT The dependence of the Hall factor and of Its thermal drift on the bias current has been mvestlgated We show that the bias-current level can be tuned to achieve a very low thermal dnft together mth a high absolute sennhwty m the range 0 4-O 5 V/T

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