High sensitivity hall sensors with low thermal drift using AlGaAs/InGaAs/GaAs heterostructures
✍ Scribed by V. Mosser; S. Contreras; S. Aboulhouda; Ph. Lorenzini; F. Kobbi; J.L. Robert; K. Zekentes
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 534 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0924-4247
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✦ Synopsis
We have investigated the interest of AlGaAs/InGaAs/GaAs heterostructures for the realization of Hall effect magnetic sensors with a high sensitivity and a low thermal drift. The physical phenomena responsible for the thermal drift of the Hall sensitivity were reviewed. A set of test devices with well-controlled structure parameters were designed in order to investigate and minimize these phenomena. Experimental data were compared with a physical model of the structure including a self-consistent description of the quantum well. These results were used to optimize the structure design. Hall sensors with much higher performances than conventional GaAs devices were fabricated. A sensitivity of 900 V/ArT with a temperature coefficient of -160 pprnPC was obtained.