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Anomalous Hall effect in III–V-based magnetic semiconductor heterostructures

✍ Scribed by H. Munekata

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
493 KB
Volume
31
Category
Article
ISSN
0921-5107

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✦ Synopsis

A novel III-V-based diluted magnetic semiconductor alloy (In,Mn)As shows interesting properties associated with carrierinduced magnetism. This paper describes the anomalous magnetotransport of p-(In,Mn)As-(Ga,A1)Sb heterostructures which exhibit perpendicular ferromagnetic order with hole concentrations above mid-101~ cm -3. Magnetic coupling between ferromagnetic MnAs clusters and host p-type (In,Mn)As is also discussed on the basis of magnetotransport data of inhomogeneous p-(In,Mn)As layers.

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