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High-performance dual-gate carbon nanotube FETs with 40-nm gate length

✍ Scribed by Yu-Ming Lin, ; Appenzeller, J.; Zhihong Chen, ; Zhi-Gang Chen, ; Hui-Ming Cheng, ; Avouris, P.


Book ID
120553894
Publisher
IEEE
Year
2005
Tongue
English
Weight
238 KB
Volume
26
Category
Article
ISSN
0741-3106

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A semianalytical carbon nanotube field-effect transistor (CNFET) model based on the virtual-source model is presented, which includes series resistance, parasitic capacitance, and direct source-to-drain tunneling leakage. The model is calibrated with recent experimental data down to 9-nm gate length