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Performance of 2 nm gate length carbon nanotube field-effect transistors with sourceâdrain underlaps

✍ Scribed by Alam, Khairul; Lake, Roger

Book ID: 121010540
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 461 KB
Volume: 87
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2011788

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