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Compact Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Calibrated With Experimental Data Down to 9-nm Gate Length

โœ Scribed by Luo, Jieying; Wei, Lan; Lee, Chi-Shuen; Franklin, Aaron D.; Guan, Ximeng; Pop, Eric; Antoniadis, Dimitri A.; Wong, H.-S. Philip

Book ID
120455024
Publisher
IEEE
Year
2013
Tongue
English
Weight
967 KB
Volume
60
Category
Article
ISSN
0018-9383

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Compact Model for Carbon Nanotube Field-
Compact Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Calibrated With Experimental Data Down to 9-nm Gate Length
โœ Luo, Jieying; Wei, Lan; Lee, Chi-Shuen; Franklin, Aaron D.; Guan, Ximeng; Pop, E ๐Ÿ“‚ Article ๐Ÿ“… 2013 ๐Ÿ› IEEE ๐ŸŒ English โš– 967 KB

A semianalytical carbon nanotube field-effect transistor (CNFET) model based on the virtual-source model is presented, which includes series resistance, parasitic capacitance, and direct source-to-drain tunneling leakage. The model is calibrated with recent experimental data down to 9-nm gate length