High performance damascene metal gate MOSFETs for 0.1 μm regime

✍ Scribed by Yagishita, A.; Saito, T.; Nakajima, K.; Inumiya, S.; Akasaka, Y.; Ozawa, Y.; Hieda, K.; Tsunashima, Y.; Suguro, K.; Arikado, T.; Okumura, K.

• Book ID: 114538156
• Publisher: IEEE
• Year: 2000
• Tongue: English
• Weight: 524 KB
• Volume: 47
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.841237