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High mobility two-dimensional hole system in GaAs∕AlGaAs quantum wells grown on (100) GaAs substrates

✍ Scribed by Manfra, M. J.; Pfeiffer, L. N.; West, K. W.; de Picciotto, R.; Baldwin, K. W.

Book ID
125455608
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
306 KB
Volume
86
Category
Article
ISSN
0003-6951

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Growth of GaAs and AIGaAs epitaxial layers on both (111)A and (111)B faces ofGaAs substrates was studied by the atmospheric metalorganic vapor phase epitaxy (MOVPE) technique. We show that GaAs and A1GaAs layers with excellent surface quality can be grown at relatively low temperatures and V/Ill rat