✦ LIBER ✦

High-gain n-p-n and p-n-p InGaAs/InAlAs double-heterojunction bipolar transistors with InAs cap layers by molecular-beam epitaxy

✍ Scribed by Peng, C.K.; Won, T.; Chen, J.; Litton, C.; Morkoc, H.

Book ID: 114538455
Publisher: IEEE
Year: 1988
Tongue: English
Weight: 301 KB
Volume: 35
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.8869

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

VIA-2 high-gain InP/InGaAs n-p-n heteroj

VIA-2 high-gain InP/InGaAs n-p-n heterojunction bipolar transistors grown by gas-source MBE

✍ Nottenburg, R.N.; Temkin, H.; Panish, M.B. 📂 Article 📅 1986 🏛 IEEE 🌐 English ⚖ 166 KB

In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/G

In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As double-heterojunction p-n-p bipolar transistors grown by molecular beam epitaxy

✍ Won, T.; Peng, C.K.; Chyi, J.; Morkoc, H. 📂 Article 📅 1988 🏛 IEEE 🌐 English ⚖ 254 KB

Structure and properties of InGaAs layer

Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy

✍ M. D. Vilisova; I. V. Ivonin; L. G. Lavrentieva; S. V. Subach; M. P. Yakubenya; 📂 Article 📅 1999 🏛 Springer 🌐 English ⚖ 540 KB

Structure and optical properties of Si/I

Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate

✍ Zakharov, N. D.; Werner, P.; Gosele, U.; Heitz, R.; Bimberg, D.; Ledentsov, N. N 📂 Article 📅 2000 🏛 American Institute of Physics 🌐 English ⚖ 653 KB

Structural and electrical properties of

Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy

✍ Kanjilal, A.; Hansen, J. Lundsgaard; Gaiduk, P.; Larsen, A. Nylandsted; Cherkash 📂 Article 📅 2003 🏛 American Institute of Physics 🌐 English ⚖ 510 KB

Structural and optical properties of het

Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy

✍ I. P. Soshnikov; N. V. Kryzhanovskaya; N. N. Ledentsov; A. Yu. Egorov; V. V. Mam 📂 Article 📅 2004 🏛 Springer 🌐 English ⚖ 205 KB