Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy

✍ Scribed by Kanjilal, A.; Hansen, J. Lundsgaard; Gaiduk, P.; Larsen, A. Nylandsted; Cherkashin, N.; Claverie, A.; Normand, P.; Kapelanakis, E.; Skarlatos, D.; Tsoukalas, D.

• Book ID: 120332476
• Publisher: American Institute of Physics
• Year: 2003
• Tongue: English
• Weight: 510 KB
• Volume: 82
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.1555709