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High-Frequency Modeling of Poly-Si Thin-Film Transistors for Low-Cost RF Applications

โœ Scribed by Kim, Soo Youn; Loke, Wing-Fai; Jung, Byunghoo; Roy, Kaushik


Book ID
121371039
Publisher
IEEE
Year
2012
Tongue
English
Weight
776 KB
Volume
59
Category
Article
ISSN
0018-9383

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Stacked gate insulator of photooxide and
โœ Yukihiko Nakata; Tetsuya Okamoto; Takashi Itoga; Toshimasa Hamada; Yutaka Ishii ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 1019 KB

A stacked gate insulator consisting of photooxide and PECVD film prepared from SiH 4 and N 2 O for use in low-temperature poly-Si thin-film transistors has been developed. The rate of photooxidation using a Xe excimer lamp is the same for (100) and (111) single-crystal Si wafers, and SiO 2 with good