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High frequency characterisation of double drift region InP and GaAs diodes

โœ Scribed by J. P. Banerjee; S. P. Pati; S. K. Roy


Publisher
Springer
Year
1989
Tongue
English
Weight
597 KB
Volume
48
Category
Article
ISSN
1432-0630

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Numerical drift-diffusion simulation of
โœ Kam-Wing Chai; Zhan-Ming Li; Sean P. McAlister; John G. Simmons ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 911 KB

This paper considers the adaptation of drift-diffusion device simulation methodology to study Auger-recombination-induced hot electron transport characteristics in InGaAsP/InP double heterostructure laser diodes. In order to model the transport behaviour of the Auger hot electrons, we decompose the