Fabrication and high frequency characterisation of GaAs MESFETs with gate lengths down to 30nm.

✍ Scribed by J.A. Adams; I.G. Thayne; N.I. Cameron; M.R.S. Taylor; S.P. Beaumont; C.D.W. Wilkinson; N.P. Johnson; A.H. Kean; C.R. Stanley

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 337 KB
• Volume: 11
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/0167-9317(90)90074-4