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High-Field Electron Mobility Model for Strained-Silicon Devices

โœ Scribed by Siddhartha Dhar; Hans Kosina; Gerhard Karlowatz; Stephan Enzo Ungersboeck; Tibor Grasser; Siegfried Selberherr


Book ID
114618515
Publisher
IEEE
Year
2006
Tongue
English
Weight
302 KB
Volume
53
Category
Article
ISSN
0018-9383

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Electron mobility model for strained-Si
โœ Dhar, S.; Kosina, H.; Palankovski, V.; Ungersboeck, S.E.; Selberherr, S. ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› IEEE ๐ŸŒ English โš– 480 KB