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High field-effect mobility zinc oxide thin film transistors produced at room temperature

✍ Scribed by E. Fortunato; A. Pimentel; L. Pereira; A. Gonçalves; G. Lavareda; H. Águas; I. Ferreira; C.N. Carvalho; R. Martins

Book ID: 116667836
Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 348 KB
Volume: 338-340
Category: Article
ISSN: 0022-3093
DOI: 10.1016/j.jnoncrysol.2004.03.096

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