High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

✍ Scribed by Chiang, H. Q.; Wager, J. F.; Hoffman, R. L.; Jeong, J.; Keszler, D. A.

• Book ID: 120479288
• Publisher: American Institute of Physics
• Year: 2005
• Tongue: English
• Weight: 428 KB
• Volume: 86
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.1843286