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Thin-film transistors based on p-type Cu2O thin films produced at room temperature

✍ Scribed by Fortunato, Elvira; Figueiredo, Vitor; Barquinha, Pedro; Elamurugu, Elangovan; Barros, Raquel; Goncalves, Goncalo; Park, Sang-Hee Ko; Hwang, Chi-Sun; Martins, Rodrigo

Book ID
118036777
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
663 KB
Volume
96
Category
Article
ISSN
0003-6951

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## Abstract Copper‐based chalcogenide thin films deposited at room temperature were examined for exploring an active layer material for a p‐channel thin film transistor (TFT) fabricable at room temperature. The electrical conductivities of chalcopyrite and simple copper chalcogenide thin films were