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High electron mobility transistor based on a GaN-AlxGa1âxN heterojunction

✍ Scribed by Asif Khan, M.; Bhattarai, A.; Kuznia, J. N.; Olson, D. T.

Book ID: 120501115
Publisher: American Institute of Physics
Year: 1993
Tongue: English
Weight: 445 KB
Volume: 63
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.109775

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