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High dose Si- and Mg-implantation in GaN: Electrical and structural analysis

โœ Scribed by J.C. Zolper; M.H. Crawford; J.S. Williams; H.H. Tan; R.A. Stall

Book ID
114168841
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
383 KB
Volume
127-128
Category
Article
ISSN
0168-583X

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Electrical Properties of the Si Implanta
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โœ Wei-Chih Lai; M. Yokoyama; Chiung-Chi Tsai; Chen-Shiung Chang; Jan-Dar Guo; Jian ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 122 KB ๐Ÿ‘ 2 views

This work performs Si ion implantation to activate and convert the electrical conduction of p-GaN films from p-type to n-type. Multiple implantation method is used to form a uniform Si implanted region in the p-type GaN epitaxial layer. Implantation energies for the multiple implantation are 40, 100