High-density silicon nitride thin film in PECVD
✍ Scribed by Brigitte Reynes; Jean Claude Bruyère
- Book ID
- 108028087
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 324 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0924-4247
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
In this paper a neural network based technique has been developed to model a plasma enhanced chemical vapor deposition (PECVD) silicon nitride process. The study covers the range of normal input parameters used for PECVD silicon nitride ®lms. These ®lm compositions range from nitrogen-rich to silico
Amorphous Si-N films are synthesised from an NH,/SiH, gas mixture by plasma-enhanced chemical vapour deposition (PECVD) at fixed radio frequency (13.56 MHz) and total gas pressure (3424 Torr). The variable process parameters and their ranges are: (i) substrate temperature, 200-400 "C; (ii) RF power