𝔖 Bobbio Scriptorium
✦   LIBER   ✦

High concentration diffusivity and clustering of arsenic and phosphorus in silicon

✍ Scribed by Solmi, S.; Nobili, D.


Book ID
111860836
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
365 KB
Volume
83
Category
Article
ISSN
0021-8979

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


The effect of phosphorus background conc
✍ A. Nylandsted Larsen; P.E. Andersen; P. Gaiduk; K. Kyllesbech Larsen πŸ“‚ Article πŸ“… 1989 πŸ› Elsevier Science 🌐 English βš– 415 KB

lhe effect of phosphorus background concentration on the di]]i4sion of tin, arsenic and antimony in silicon has been studied for phosphorus concentrations between about 9x 10 ~' ~ and 5 x 10 :Β° cm-~, corresponding to 10 <-n/n i <-60. 7he effectiw, difJ'usion coefficients are found to be proportional