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Hexagonal iron nitride thin films prepared by plasma reaction

✍ Scribed by Yukio Saito; Hideaki Tanaka; Kazunori Fujita


Publisher
Springer
Year
1986
Tongue
English
Weight
437 KB
Volume
5
Category
Article
ISSN
0261-8028

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## Abstract Copper nitride film prepared by plasma‐immersion ion implantation (PIII) is demonstrated to exhibit reversible resistance variance character. By forming a gradually distributed nitrogen concentration in the Cu‐nitride film, the nitride‐based memory devices show bipolar nature with a low