Heterovalent ZnSe/GaAs Interfaces
✍ Scribed by T. Yao; F. Lu; M. W. Cho; K. W. Koh; Z. Zhu; L. H. Kuo; T. Yasuda; A. Ohtake; S. Miwa; K. Kimura; K. Nakajima
- Book ID
- 101375507
- Publisher
- John Wiley and Sons
- Year
- 1997
- Tongue
- English
- Weight
- 383 KB
- Volume
- 202
- Category
- Article
- ISSN
- 0370-1972
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📜 SIMILAR VOLUMES
simulations were performed to study the defect formation in ZnSe/GaAs heterovalent epitaxy. It was shown that when ZnSe is grown on the GaAs (001) As-rich cð4 Â 4Þ surface, As antisites become the origin of defects such as dislocations, while ZnSe grows in a step-flow manner on the GaAs (110) ð1 Â 2
## Abstract ZnSe/semi‐insulating GaAs interfaces were studied by observing photogenerated plasmon–LO (PPL) coupled modes by nonresonant micro‐Raman spectroscopy. The effect of the carriers generated by the focused laser beam was investigated for a series of different thicknesses of ZnSe epitaxial l