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heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects

โœ Scribed by O'Shea, J. J.; Brazel, E. G.; Rubin, M. E.; Bhargava, S.; Chin, M. A.; Narayanamurti, V.

Book ID
125814090
Publisher
The American Physical Society
Year
1997
Tongue
English
Weight
235 KB
Volume
56
Category
Article
ISSN
1098-0121

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We investigate the suitability of Si 1-y C y for n-channel electronic devices by calculating the band offsets of Si 1-y C y layers grown on silicon. A reformulated tight binding method with measured spectroscopic term values is employed for calculation of valence band offsets. Calculation of conduct