Theory of valence and conduction band of
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A.J. Ekpunobi; A.O.E. Animalu
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Article
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2002
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Elsevier Science
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English
⚖ 55 KB
We investigate the suitability of Si 1-y C y for n-channel electronic devices by calculating the band offsets of Si 1-y C y layers grown on silicon. A reformulated tight binding method with measured spectroscopic term values is employed for calculation of valence band offsets. Calculation of conduct