Growth temperature effect on the heteroe
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B.V Rao; T Okamoto; A Shinmura; D Gruznev; M Mori; T Tambo; C Tatsuyama
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Article
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2000
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Elsevier Science
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English
β 991 KB
Direct growth of InSb on Si 111 substrate is achieved by suitably adjusting the growth rate and substrate temperature. In this report, we detail the role of stoichiometry and growth temperature in the evolution of reflection high-energy electron Ε½ . Ε½ .Ε½ . diffraction RHEED patterns, surface morphol