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Heteroepitaxial growth of InSb(111) on Si(111)

✍ Scribed by M. Kitabatake; T. Kawasaki; T. Korechika


Book ID
113205255
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
965 KB
Volume
281-282
Category
Article
ISSN
0040-6090

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Direct growth of InSb on Si 111 substrate is achieved by suitably adjusting the growth rate and substrate temperature. In this report, we detail the role of stoichiometry and growth temperature in the evolution of reflection high-energy electron Ε½ . Ε½ .Ε½ . diffraction RHEED patterns, surface morphol