Heteroepitaxial growth of erbium carbide on boron doped homoepitaxial diamond (100) films
β Scribed by Saby, C.; Muret, P.; Pruvost, F.; Patrat, G.
- Book ID
- 123144040
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 127 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0925-9635
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## Abstract Asβgrown (100) homoepitaxial diamond films with boron concentrations [B] from 4.6 Γ 10^16^ to 1.5 Γ 10^21^ cm^β3^ have been analysed using Xβray photoelectron spectroscopy (XPS). Their C 1s core levels contain a dominant component around 284.17 Β± 0.2 eV ascribed to sp^3^ C and a main se
Several kinds of (100) surfaces of homoepitaxial diamond films doped with boron are investigated. The valence band maximum at the surface and electronic affinity are measured using ultraviolet and X-ray photoelectron spectroscopies. In p-type doped films, resistivity measurements indicate that the b