Surface roughening of diamond (001) films during homoepitaxial growth in heavy boron doping
β Scribed by Tokuda, Norio; Umezawa, Hitoshi; Saito, Takeyasu; Yamabe, Kikuo; Okushi, Hideyo; Yamasaki, Satoshi
- Book ID
- 121943041
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 686 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0925-9635
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π SIMILAR VOLUMES
Several kinds of (100) surfaces of homoepitaxial diamond films doped with boron are investigated. The valence band maximum at the surface and electronic affinity are measured using ultraviolet and X-ray photoelectron spectroscopies. In p-type doped films, resistivity measurements indicate that the b
## Abstract Asβgrown (100) homoepitaxial diamond films with boron concentrations [B] from 4.6 Γ 10^16^ to 1.5 Γ 10^21^ cm^β3^ have been analysed using Xβray photoelectron spectroscopy (XPS). Their C 1s core levels contain a dominant component around 284.17 Β± 0.2 eV ascribed to sp^3^ C and a main se