𝔖 Bobbio Scriptorium
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HBT driver power amplifiers

Book ID
104367285
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
40 KB
Volume
17
Category
Article
ISSN
0961-1290

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πŸ“œ SIMILAR VOLUMES

InGaP HBT MMIC amplifiers
InGaP HBT MMIC amplifiers
πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 124 KB
InGaP/GaAs HBT power amplifier with CMRC
InGaP/GaAs HBT power amplifier with CMRC structure
✍ C. K. Poek; B. P. Yan; E. S. Yang πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 137 KB

## Abstract An InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier is developed for WCDMA user equipment, specifically, band‐1‐power class‐2 application. The HBT power amplifier demonstrates maximum output power P~out~ of 29.4 dBm and power‐added efficiency (PAE) of 48% at a frequenc

Calculation of the power capabilities of
Calculation of the power capabilities of HBT amplifiers based on a new physical HBT model
✍ Krozer, Viktor ;Ruppert, Markus ;SchΓΌssler, Martin ;Fricke, Klaus ;Lee, Woo-Yong πŸ“‚ Article πŸ“… 1996 πŸ› John Wiley and Sons 🌐 English βš– 866 KB

A novel model for the simulation of the microwave power capabilities of HBTs is presented. The model is based on physical analytical formulation of the terminal currents as functions of the base-emitter and base-collector voltages. It takes into account the unequal thermal distribution of temperatur