Content:
Preface, Pages vii-viii, Paul H. Holloway, Gary E. McGuire
Contributors, Pages ix-x
1 - Bulk Crystal Growth, Pages 1-28, Shin-ichi Akai, Masamichi Yokogawa
2 - MOCVD of Compound Semiconductor Layers, Pages 29-83, Eberhard Veuhoff
3 - Molecular Beam Epitaxy, Pages 84-169, Kambiz Alavi
4 - Physical and Chemical Deposition of Metals as Ohmic Contacts to InP and Related Materials, Pages 170-250, Avishay Katz
5 - Surface Processing of IIIโV Semiconductors, Pages 251-284, Sidney I. Ingrey
6 - Ion Implantation Induced Extended Defects in GaAs, Pages 285-327, Kevin S. Jones
7 - Passivation of GaAs and InP, Pages 328-369, Vinod Malhotra, Carl W. Wilmsen
8 - Wet and Dry Etching of Compound Semiconductors, Pages 370-441, Stephen J. Pearton
9 - Rapid Isothermal Processing (RIP), Pages 442-517, Rajendra Singh
10 - Epitaxial Lift-Off for Thin Film Compound Semiconductor Devices, Pages 518-562, Nan Marie Jokerst
11 - Packaging, Pages 563-612, Eric Y. Chan
12 - Chemical, Structural and Electronic Characterization of Compound Semiconductor Surfaces and Interfaces by X-ray Photoelectron Spectroscopy and Diffraction Techniques, Pages 613-652, Scott A. Chambers
13 - Characterization of Compound Semiconductor Material by Ion Beams, Pages 653-677, Stephen W. Downey
14 - Optical Characterization of Compound Semiconductors, Pages 678-771, Brian J. Skromme
15 - Gallium Arsenide Microelectronic Devices and Circuits, Pages 772-812, Richard Y. Koyama
16 - Optoelectronic Devices, Pages 813-865, Derek L. Lile
Index, Pages 866-914