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Hall mobility and electron trap density in GaAsN grown by liquid phase epitaxy

โœ Scribed by Dhar, S; Mondal, A; Das, T D

Book ID
121701632
Publisher
Institute of Physics
Year
2007
Tongue
English
Weight
95 KB
Volume
23
Category
Article
ISSN
0268-1242

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We have performed spectroscopic measurements in order to investigate the exciton localization mechanism and the bandgap energies of GaAsN in three regimes: (i) doped; (ii) intermediate doped-alloy; and (iii) alloy and the transition energies in strained GaInAsN/GaAs quantum wells laser structures.