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Properties of a Nitrogen-Related Hole Trap Acceptor-Like State in p-Type GaAsN Grown by Chemical Beam Epitaxy

✍ Scribed by Bouzazi, Boussairi; Suzuki, Hidetoshi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi


Book ID
123619136
Publisher
Institute of Pure and Applied Physics
Year
2010
Tongue
English
Weight
767 KB
Volume
49
Category
Article
ISSN
0021-4922

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