Hall effect of copper nitride thin films

✍ Scribed by Yue, G. H. ;Liu, J. Z. ;Li, M. ;Yuan, X. M. ;Yan, P. X. ;Liu, J. L.

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 236 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200420062

✦ Synopsis

Abstract

The Hall effect of copper nitride (Cu~3~N) thin films was investigated in our work. Cu~3~N films were deposited on glass substrates by radio‐frequency (RF) magnetron sputtering at different temperatures using pure copper as the sputtering target. The Hall coefficients of the films are demonstrated to be dependent on the deposition gas flow rate and the measuring temperature. Both the Hall coefficient and resistance of the Cu~3~N films increase with the nitrogen gas flow rate at room temperature, while the Hall mobility and the carrier density of the films decrease. As the temperature changed from 100 K to 300 K, the Hall coefficient and the resistivity of the films decreased, while the carrier density increased and Hall mobility shows no great change. The energy band gap of the Cu~3~N films deduced from the curve of the common logarithm of the Hall coefficient against 1/T is 1.17–1.31 eV. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)