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Hall effect anomalies in n-type Pb1−xEuxSe layers grown on silicon

✍ Scribed by Almaggoussi, A. ;Abounadi, A. ;Charar, S. ;Maurice, T. ;Breton, G.

Publisher: John Wiley and Sons
Year: 2007
Tongue: English
Weight: 241 KB
Volume: 204
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200723091

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✦ Synopsis

Abstract

Transport measurements (resistivity and Hall density) were made in the temperature range 10–300 K on n‐Pb~1−x~ Eu__~x~__ Se (0 ≤ x ≤ 8%) epilayers grown by molecular beam epitaxy on silicon substrates. In the vicinity of 77 K anomalies of electron concentration were observed. To explain this anomalous behaviour, a model is proposed based on the existence of three levels: two donors and one acceptor. The origin of these levels is attributed to native defects. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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