✦ LIBER ✦

Effect of Cu on the hall mobility in n-type epitaxial GaAs layers

✍ Scribed by Martini, H. ;Balk, P.

Publisher: John Wiley and Sons
Year: 1980
Tongue: English
Weight: 182 KB
Volume: 57
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210570162

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## Abstract Transport measurements (resistivity and Hall density) were made in the temperature range 10–300 K on n‐Pb~1−__x__~ Eu__~x~__ Se (0 ≤ __x__ ≤ 8%) epilayers grown by molecular beam epitaxy on silicon substrates. In the vicinity of 77 K anomalies of electron concentration were observed. To