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Epitaxial deposition of degenerate n-type layers of Ge on GaAs

✍ Scribed by J.K. Kennedy; W.D. Potter

Publisher
Elsevier Science
Year
1972
Tongue
English
Weight
373 KB
Volume
13-14
Category
Article
ISSN
0022-0248

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## Abstract CuInTe~2~ thin films were deposited onto semi‐insulating (111)A‐oriented GaAs substrates by flash evaporation. Epitaxial growth was found in the substrate temperature range __T__~sub~ = 620 … 790 K. Above 750 K a second phase was found besides the chalcopyrite phase. All epitaxial films