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Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy

✍ Scribed by Sasaki, Kohei; Higashiwaki, Masataka; Kuramata, Akito; Masui, Takekazu; Yamakoshi, Shigenobu

No coin nor oath required. For personal study only.

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