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Morphological and structural properties of InP/Gd2O3 nanowires grown by molecular beam epitaxy on silicon substrate

✍ Scribed by J. Penuelas; X. Lu; N.P. Blanchard; G. Saint-Girons; B. Vilquin; P. Crémillieu; R. Mazurczyk; M. Gendry

No coin nor oath required. For personal study only.

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