Growth rate dependence of the interface distribution coefficient in the system Ge-Ga
β Scribed by C.A. Wang; J.R. Carruthers; A.F. Witt
- Publisher
- Elsevier Science
- Year
- 1982
- Tongue
- English
- Weight
- 238 KB
- Volume
- 60
- Category
- Article
- ISSN
- 0022-0248
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## Abstract On the basis of the LPE GaAs growth rate measurements in which we used current marks of time, the diffusion coefficient and the critical supercooling of arsenic in Ga solution by a semiempirical method was determined. Some knowledge of these parameters is indispensable for investigating