Growth Parameters and Substrate Treatment for the MOCVD Growth of ZnO

✍ Scribed by Wang, Jinzhong ;Sallet, Vincent ;Amiri, Gaëlle ;Rommeluère, Jean-François ;Lusson, Alain ;Rzepka, E. ;Lewis, John E. ;Galtier, Pierre ;Gorochov, Ouri

• Book ID: 105363009
• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 334 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200420068

✦ Synopsis

Abstract

ZnO films were grown on sapphire substrates using vertical MOCVD system with DEZn and tertiary‐butanol as precursors, respectively. The benefits of substrate treatment on the microstructure and morphology of the film were shown. The influences of growth temperature and partial pressure ratio R~VI/II~ on crystal quality were investigated in detail. XRD, Electron Channeling Pattern and Raman spectra indicated that the highest crystal quality film was grown at 425 °C when the partial pressure ratio of tertiary‐butanol (t‐Bu) to diethylzinc (DEZn) was 8. X‐ray rocking curves exhibit Full Width at Half Maximum (FWHM) of 607 arcsec. A strong exciton emission peak appears in the photoluminescence (PL) spectra. Furthermore, the peak position has a slight shift to low energy with increase of the growth temperature. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)