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Growth parameter dependence of structural, electrical and magnetic properties in GaGdN layers grown on GaN(0001)

✍ Scribed by Sano, S.; Hasegawa, S.; Mitsuno, Y.; Higashi, K.; Ishimaru, M.; Sakurai, T.; Ohta, H.; Asahi, H.


Book ID
121784133
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
918 KB
Volume
378
Category
Article
ISSN
0022-0248

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## Abstract We report results on growth studies of Fe on GaN, in particular with respect to structural and magnetic properties. The growth of GaN has been carried out by molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE) on Si(111) and Al~2~O~3~ substrates, respectively. Fe