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Growth of ZnSe films on GaAs(100) substrate by x-ray-enhanced, vapor-phase epitaxy

✍ Scribed by A. V. Kovalenko

Book ID
110119514
Publisher
Springer
Year
1997
Tongue
English
Weight
72 KB
Volume
31
Category
Article
ISSN
1063-7826

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Selective Growth of Cubic GaN on Pattern
Selective Growth of Cubic GaN on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
✍ Wu, Jun ;Kudo, M. ;Nagayama, A. ;Yaguchi, H. ;Onabe, K. ;Shiraki, Y. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 180 KB πŸ‘ 2 views

Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the sampl