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Growth of Zn δ-doped AlxGa1−xAs (x = 0–0.65) by low pressure metal organic vapour phase epitaxy

✍ Scribed by G. Li; C. Jagadish

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Growth of high-quality AlxGa1−xAs (x = 0

✍ P.R. Hageman; S.M. Olsthoorn; L.J. Giling 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 702 KB

Growth of Si δ-doped GaAs by low pressur

✍ G. Li; C. Jagadish 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 589 KB

Parametric studies of Zn incorporation d

✍ G. Li; C. Jagadish 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 833 KB

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✍ K. Tomita; F. Kitagawa; H. Kano; M. Hashimoto 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 601 KB

Confinement and concentration of electro

✍ G. Li; C. Jagadish 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 642 KB