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Growth of high-quality AlxGa1−xAs (x = 0.05−0.65) by low-pressure metalorganic vapour phase epitaxy using dimethylethylamine-alane

✍ Scribed by P.R. Hageman; S.M. Olsthoorn; L.J. Giling


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
702 KB
Volume
142
Category
Article
ISSN
0022-0248

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